r JCS10N65FC 201510d 1/10 JCS10N65FC order codes ? marking ? package halogen free ? packaging device weight JCS10N65FC-o-f-n-b jcs10n65f to-220mf no tube 2.20 g(typ) JCS10N65FC-o-f2-n-b jcs10n65f to-220mf-k2 no tube 2.00 g(typ) ? package ? main characteristics i d 10 a v dss 650 v rdson-max @vgs=10v 1.0 ? qg-typ 54 nc ? z ??? z z led ? applications z high efficiency switch mode power supplies z electronic lamp ballasts based on half bridge z led power supplies ? z ? z c rss ( ? 18pf) z ?? z ??? z ? dv/dt z rohs ? features z low gate charge z low c rss (typical 18pf ) z fast switching z 100% avalanche tested z improved dv/dt capability z rohs product ? order message
r JCS10N65FC 201510d 2/10 ?? absolute ratings (tc=25 ) * ?? *drain current limited by maximum junction temperature ? parameter symbol ? value unit JCS10N65FC ???? drain-source voltage v dss 650 v ? drain current -continuous i d t=25 t=100 10* a 6.0* a ? ? 1 drain current ? pulse note 1 i dm 40* a ??? gate-source voltage v gss 30 v ? ? 2 single pulsed avalanche energy note 2 e as 1000 mj ? ? 1 avalanche current note 1 i ar 10 a ?? ? 1 repetitive avalanche current note 1 e ar 15.6 mj ??? ? 3 peak diode recovery dv/dt note 3 dv/dt 5.0 v/ns ? power dissipation p d t c =25 -derate above 25 40 w 0.32 w/ ??? operating and storage temperature range t j t stg -55 +150 ?? maximum lead temperature for soldering purposes t l 300
r JCS10N65FC 201510d 3/10 electrical characteristics ? parameter symbol tests conditions min typ max units ? off ?characteristics ??? drain-source voltage bv dss i d =250 a, v gs =0v 650 - - v ?? breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25 - 0.65 - v/ ???? zero gate voltage drain current i dss v ds =650v,v gs =0v, t c =25 - - 10 a v ds =520v, t c =125 - - 100 a ?? gate-body leakage current, forward i gssf v ds =0v, v gs =30v - - 100 na ?? gate-body leakage current, reverse i gssr v ds =0v, v gs =-30v - - -100 na ?? on-characteristics ?? gate threshold voltage v gs(th) v ds = v gs , i d =250 a 2.0 - 4.0 v ?? static drain-source on-resistance r ds(on) v gs =10v , i d =5.0a - 0.73 1.0 ? forward transconductance g fs v ds = 40v, i d =5.0a note 4 - 5.7 - s ? dynamic characteristics input capacitance c iss v ds =25v, v gs =0v, f=1.0mh z - 1270 1660 pf output capacitance c oss - 150 133 pf reverse transfer capacitance c rss - 18 25 pf
r JCS10N65FC 201510d 4/10 electrical characteristics thermal characteristic switching characteristics ?? turn-on delay time t d (on) v dd =325v,i d =10a,r g =25 ? note 4 5 - 30.7 39 ns ? turn-on rise time t r - 75.5 97 ns ?? turn-off delay time t d (off) - 85 108 ns ?? turn-off fall time t f - 54.4 71 ns ? total gate charge q g v ds =520v , i d =10a v gs =10v note 4 5 - 54 75 nc ?? gate-source charge q gs - 7.5 - nc ?? gate-drain charge q gd - 21.4 - nc ????? drain-source diode characteristics and maximum ratings maximum continuous drain -source diode forward current i s - - 10 a maximum pulsed drain-source diode forward current i sm - - 40 a ? drain-source diode forward voltage v sd v gs =0v, i s =10a - 1.30 - v ?? reverse recovery time t rr v gs =0v, i s =10a di f /dt=100a/ s (note 4) - 453 - ns ? reverse recovery charge q rr - 2.9 - c ? parameter symbol max unit JCS10N65FC ??? thermal resistance, junction to case r th(j-c) 3.1 /w ? thermal resistance, junction to ambient r th(j-a) 56 /w ?? 1 ? 2 l=18mh, i as =10a, v dd =50v, r g =25 ? , ? t j =25 3 i sd 10a,di/dt 300a/ s,vdd bv dss , ? t j =25 4 ? 300 s, ?? 2 5 ??? notes: 1 pulse width limited by maximum junction temperature 2 l=18mh, i as =10a, v dd =50v, r g =25 ? ,starting t j =25 3 i sd 10a,di/dt 300a/ s,vdd bv dss , starting t j =25 4 pulse test pulse width 300 s,duty cycle 2 5 essentially independent of operating temperature
1 1 0 i d [a] d r c r 201510d el 1 1 0 v gs top 15v 10v 9v 8v 7v 6.5v 6v 5.5v bottom 5v on-reg on-resis t r ain curr e c apacita n ectrica l v d s ion char a t ance v ar e nt and g a n ce chara c l chara c 10 notes: 1. 250 s puls e 2. t c =25 s [v] a cteristic s iation vs. a te volta g c teristics ciss c o crs s c teristi e test i d [ a ] 0.1 1 1 0 0 i dr [a] s g e b o ss s cs (curv e 2 0.1 1 10 d [] 150 0 0 . 2 0.3 0.4 0 . 150 tra n b ody dio d vs. sour c gate c e s) 46 25 n sfer cha r d e forwa r c e curren t c harge c h jcs10 8 notes: 1.250 s p 2.v ds =40 s pul s 2. v gs =0v 25 v ] r acteristi c r d voltage t and te m h aracteris t n65fc 5/10 10 p ulse test v 1.2 1.3 s e tes t c s v ariatio n m perature t ics n
0. 8 0. 9 1. 0 1. 1 1. 2 bv ds (normalized) i d drain current [a] r 201510d el e -75 -50 -25 8 9 0 1 2 breakd o v maxi m vs. c 25 50 0 2 4 6 8 10 i d drain current [a] e ctrical 025 5 t j [ o wn volt a v s. tempe m um drai c ase tem 75 t c case temper a avalanc h vs. tem p chara c 5 075100 note s 1. v g s 2. i d = [ ] a ge variat i rature n curren t perature 100 125 a ture [ ] h e energy p erature c teristi c 125 150 s : s =0v 250 a r (normali ed) i on t 150 c s (curve s -75 -50 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 r d (on ) (normali z ed) on- r v maxi m s ) -25 0 25 r esistan c v s. temp e m um saf e to- 2 jcs10 50 75 10 0 notes: 1. v gs = 2. i d =4 . t j [ ] c e variati o e rature e operati n 2 20mf n65fc 6/10 0 125 150 = 10v . 75a o n n g area
r JCS10N65FC 201510d 7/10 transient thermal response curve to-220mf
r JCS10N65FC 201510d 8/10 ? package mechanical data to-220mf unit mm
r JCS10N65FC 201510d 9/10 ? package mechanical data to-220mf-k2 unit mm
r JCS10N65FC 201510d 10/10 ? 1. ????????? ?????? ???? 2. ????? ?? 3. ????? ?????? 4. ??? note 1. jilin sino-microelec tronics co., ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. we strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don?t be hesitate to contact us. 3. please do not exceed the absolute maximum ratings of the device when circuit designing. 4. jilin sino-microelectronics co., ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. ?? ?????? ???? 99 ?? 132013 ? 86-432-64678411 86-432-64665812 ? www.hwdz.com.cn ? ??? 99 ?? 132013 86-432-64675588 64675688 64678411-3098/3099 : 86-432-64671533 contact jilin sino-microelectronics co., ltd. add: no.99 shenzhen street, jilin city, jilin province, china. post code: 132013 te l 86-432-64678411 fax 86-432-64665812 web site www.hwdz.com.cn market department add: no.99 shenzhen street, jilin city, jilin province, china. post code: 132013 tel: 86-432-64675588 64675688 64678411-3098/3099 fax: 86-432-64671533
|
